Número da peça R6010ANX Fabricante ROHM Semiconductor Categorias MOSFET RoHS Ficha de dados R6010ANX Descrição MOSFET Nch 600V 10A MOSFET
Fabricante ROHM Semiconductor Categorias MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Bulk Pd - Power Dissipation 50 W Qg - Gate Charge 25 nC Rds On - Drain-Source Resistance 560 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4.5 V