Número da peça R6000ENHTB1 Fabricante ROHM Semiconductor Categorias MOSFET RoHS Ficha de dados R6000ENHTB1 Descrição MOSFET 600V MOSFET
Fabricante ROHM Semiconductor Categorias MOSFET Channel Mode Enhancement Id - Continuous Drain Current 500 mA Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOP-8 Packaging Cut Tape, Reel Pd - Power Dissipation 2 W Qg - Gate Charge 4.3 nC Rds On - Drain-Source Resistance 8.8 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 5 V