Número da peça D3S099N65B-U Fabricante D3 Semiconductor Categorias MOSFET RoHS Ficha de dados D3S099N65B-U Descrição MOSFET 99 mOhm 650V Superjunction Power MOSFET in TO-220
Fabricante D3 Semiconductor Categorias MOSFET Channel Mode Enhancement Id - Continuous Drain Current 35.5 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Tube Pd - Power Dissipation 281 W Qg - Gate Charge 62.6 nC Rds On - Drain-Source Resistance 90 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 2.3 V