Número da peça R6004ENX Fabricante ROHM Semiconductor Categorias MOSFET RoHS Ficha de dados R6004ENX Descrição MOSFET 10V Drive Nch MOSFET
Fabricante ROHM Semiconductor Categorias MOSFET Channel Mode Enhancement Id - Continuous Drain Current 4 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220-3 Packaging Cut Tape, Reel Pd - Power Dissipation 40 W Qg - Gate Charge 15 nC Rds On - Drain-Source Resistance 900 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V