Número da peça R6030ENZ4C13 Fabricante ROHM Semiconductor Categorias MOSFET RoHS Ficha de dados R6030ENZ4C13 Descrição MOSFET 600V N-CH 30A POWER MOSFET
Fabricante ROHM Semiconductor Categorias MOSFET Channel Mode Enhancement Id - Continuous Drain Current 30 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 305 W Qg - Gate Charge 85 nC Rds On - Drain-Source Resistance 130 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V