Número da peça R6003KND3TL1 Fabricante ROHM Semiconductor Categorias MOSFET RoHS Ficha de dados R6003KND3TL1 Descrição MOSFET 600V Vdss; 3A Id 44W Pd; TO-252
Fabricante ROHM Semiconductor Categorias MOSFET Channel Mode Enhancement Id - Continuous Drain Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 44 W Qg - Gate Charge 8 nC Rds On - Drain-Source Resistance 1.5 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V